Description
Features:
- Available Capacities: DDR3 8GB 1600MHz UDIMM
- VDD = VDDQ = 1.5V ±0.075V
- 1.35V center-terminated push/pull I/O
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and
mask signals - Programmable CAS READ latency (CL)
- Posted CAS additive latency (AL)
- Programmable CAS WRITE latency (CWL) based on tCK
- Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode
register set [MRS]) - CAS Latency(Nanosecond): 13.75
- Programmable CAS latency 9, 10 ,11 supported
- Programmable additive latency 0, CL-1, and CL-2 supported
- Programmable CAS Write latency (CWL) = 9, 10, 11
- Selectable BC4 or BL8 on-the-fly (OTF)
- Self refresh mode
- Average Refresh Cycle (Tcase of 0 °C to 95 °C)
– 64ms, 8192 cycle refresh at 0°C to 85°C
– 32ms, 8192 cycle refresh at 85°C to 95°C - Self refresh temperature (SRT)
- Write leveling
- Multipurpose register
- Output driver calibration
- JEDEC standard 78ball FBGA(x4/x8)
- RoHS compliant
Specification:
| Capacity | 8GB |
| DRAM Type | DDR3 |
| Form Factor | DDR3 LongDimm |
| Part Number |
EVMST8GB1600DT08233641 |
| Memory Architecture | 512Mbx8bit |
| Frequency(Speed) | 1600 MHZ Low voltage |
| CAS Latency | 11.0/9.0/7.0 |
| Chip Density | 256Mx8 8Chips/ 256Mx8 16Chips/ 256Mx16 4Chips/ 256Mx16 8Chips / 512Mx8 8Chips / 512Mx8 16Chips |
| Bandwidth | Pc3 12800 L |
| RAM Compatible with | Desktop |
| Buffered RAM | Unbuffered |
| Memory Layout (Modules x size) | UDIMM 133.35x30mm |
| Operating Temperature | 0 C to 85 C |
| Storage Temperature | -55 C to +100 C |
| Memory Voltage | 1.35V/1.5Voltage |
| Pins | 240 PIN |
| Module Configuration | 2Rx8 |
| Row Cycle Time(Nanosecond) | 48.75 |
| Refresh Row Cycle Time(Nanosecond) | 260ns(min.) |
| Warranty | 10 Years |
| Note | *** Features, Price, Specifications are subject to change without notice. |
There are no reviews yet.